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        4寸晶棒

        2014-08-31




        Item


        4"Specification

        Unit

        Remark


        Substrate grade


        Sapphire Ingot

        ~

         


        Crystal growth method


        Kyropulos Al2O3 or another on agreement

        ~

         


        Optical Characteristic


        High purity optical grade monocrystalline

        ~

         


        Orientation


        C-plane(0001) ±0.1

        ~

         


        Diameter of ingot


        100.2,±0.1?

        mm

         


        Length of Prime flat


        30.0±0.5

        mm

         


        Orientation of Prime flat


        A-plane(1 1-2 0)± 0.2?

        ~

         


        Rod Length


        50

        mm

         


        Surface Finish


        Circumference surface Ra < 1 μm; Both ends surface Ra < 1 μm

        μm

         


        Chip size on both sides

        < 0.5 mm x 0.5 mm

        ~

         

        Crystal Bubble/Defects Percentage


        < 15%

        ~


        Defects zones include bubbles, scattering centers, grain boundary, twinning, inclusion, stress distortion, and cracks inside. Defect zones need to be marked。


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